SFP30N06 데이터 시트보기 (PDF) - SemiWell Semiconductor
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SFP30N06 Datasheet PDF : 7 Pages
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Fig 1. On-State Characteristics
102
Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
Bottom : 5.0 V
101
100
10-1
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
100
80
VGS = 10V
60
VGS = 20V
40
20
※ Note : TJ = 25℃
0
0
20
40
60
80
100
120
140
ID, Drain Current [A]
Fig 5. Capacitance Characteristics
2000
1500
Ciss
1000
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
※ Notes :
1. VGS = 0V
2. f=1MHz
500
0
0
Coss
Crss
5
10
15
20
25
30
35
VDS, Drain-Source Voltage [V]
SFP30N06
Fig 2. Transfer Characteristics
102
101
100
2
175oC
25oC
-55oC
※ Notes :
1. V = 25V
DS
2. 250µ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Fig 4. On State Current vs.
Allowable Case Temperature
102
101
100
0.2
175℃
25℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-Drain voltage[V]
Fig 6. Gate Charge Characteristics
12
10
VDS = 30V
VDS = 48V
8
6
4
2
※ Note : ID = 30.0 A
0
0
5
10
15
20
25
30
Qg, Total Gate Charge [nC]
3/7
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