SFP30N06 데이터 시트보기 (PDF) - SemiWell Semiconductor
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SFP30N06 Datasheet PDF : 7 Pages
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SFP30N06
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
60
Δ BVDSS/ Breakdown Voltage Temperature
Δ TJ coefficient
ID = 250uA, referenced to 25 °C
-
VDS = 60V, VGS = 0V
-
IDSS Zero Gate Voltage Drain Current
VDS = 48V, TC = 150 °C
-
Gate-Source Leakage, Forward
VGS = 20V, VDS = 0V
IGSS
Gate-Source Leakage, Reverse
VGS = -20V, VDS = 0V
-
On Characteristics
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250uA
2.0
RDS(ON)
Static Drain-Source On-state Resis-
tance
VGS =10 V, ID = 15A
-
Dynamic Characteristics
Ciss
Input Capacitance
-
Coss Output Capacitance
VGS =0 V, VDS =25V, f = 1MHz
-
Crss Reverse Transfer Capacitance
-
Dynamic Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
-
VDD =30V, ID =15A, RG =50Ω
-
※ see fig. 13.
-
(Note 4, 5)
-
-
VDS =48V, VGS =10V, ID =30A
-
Qgd
Gate-Drain Charge(Miller Charge)
※ see fig. 12.
(Note 4, 5)
-
Typ Max Units
-
-
0.062
-
-
1
-
10
100
-
-100
V
V/°C
uA
uA
nA
nA
-
4.0
V
0.029 0.04
Ω
930 1210
290 380
pF
75
100
15
40
25
60
ns
60
130
40
90
27
35
6.2
-
nC
11.1
-
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction
Diode in the MOSFET
IS =30A, VGS =0V
IS=30A,VGS=0V,dIF/dt=100A/us
※ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 560uH, IAS =30A, VDD = 25V, RG = 0Ω , Starting TJ = 25°C
3. ISD ≤ 30A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.
Min.
-
-
-
-
-
Typ.
-
-
-
45
65
Max.
30
120
1.5
-
-
Unit.
A
V
ns
nC
2/7
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