SDD04S60 데이터 시트보기 (PDF) - Infineon Technologies

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SDD04S60

Silicon Carbide Schottky Diode

Infineon Technologies 

SDP04S60, SDD04S60

SDT04S60

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

AC Characteristics

Total capacitive charge

VR=400V, IF=4A, diF/dt=200A/µs, Tj=150°C

Switching time

VR=400V, IF=4A, diF/dt=200A/µs, Tj=150°C

Total capacitance

Qc

-

13

- nC

trr

-

n.a.

- ns

C

pF

VR=0V, TC=25°C, f=1MHz

VR=300V, TC=25°C, f=1MHz

VR=600V, TC=25°C, f=1MHz

- 150 -

-

10

-

-

7

-

Rev. 2.5

Page 3

2008-06-02

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