SDD04S60 데이터 시트보기 (PDF) - Infineon Technologies

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SDD04S60

Silicon Carbide Schottky Diode

Infineon Technologies 

Thermal Characteristics

Parameter

Characteristics

Thermal resistance, junction - case

Thermal resistance, junction - ambient, leaded

SMD version, device on PCB:

PG-TO252-3-1: @ min. footprint

PG-TO252-3-1: @ 6 cm2 cooling area 2)

SDP04S60, SDD04S60

SDT04S60

Symbol

Values

Unit

min. typ. max.

RthJC

RthJA

RthJA

-

-

4.1 K/W

-

-

62

-

-

75

-

-

50

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

Static Characteristics

Diode forward voltage

IF=4A, Tj=25°C

IF=4A, Tj=150°C

VF

V

-

1.7 1.9

-

2 2.4

Reverse current

VR=600V, Tj=25°C

VR=600V, Tj=150°C

IR

µA

-

15 200

-

40 1000

1CCM, VIN= 85VAC, Tj = 150°C, TC =100°C, η = 93%, ∆ IIN = 30%

2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

Rev. 2.5

Page 2

2008-06-02

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