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SC1406G 데이터 시트보기 (PDF) - Semtech Corporation

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SC1406G Datasheet PDF : 28 Pages
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SC1406G
POWER MANAGEMENT
Soft-Start Design:
The three outputs have two soft-start controls, with the two
linear regulators sharing one of them. The soft-start timing is
controlled with a capacitor charged by a nominal 1mA current
source. The soft-start period is the time to charge the soft-start
capacitors to Vref (though the voltage eventually terminates
near Vcc). The soft-start capacitor value is calculated for a 2ms
nominal time by:
T.
CSS :=
ICSS tSS
VREF
CSS = 1.176 ×
109 F
The soft-start period for VCORE should be somewhat longer due to
the higher power and larger amount of output capacitance to
charge. Choosing 3ms results in C10=1800pF.
Low Battery Design:
VCIN (pin 4) must be referenced to the VIO rail; VCOUT (pin 3)
can be tied to either VCLK or VCC , depending on the connection of
the pull-up resistor. The clamp circuit has a dedicated refer-
ence, VCBYP (pin 5) that requires a 1.5nF capacitor for proper
operation. The clamp circuit is not normally used in Pentium III
mobile computers. To disable this function, tie VCIN to analog
ground, with VCOUT and VCBYP open.
Other Features and Functions:
ENABLE is a 5V-safe CMOS input with an upper threshold
voltage at 70% of Vcc and a lower threshold of 0.8V. It can be
used in two different ways. One is to tie ENABLE to the PWRDY
pin of the SC1405; this will bring both the SC1405 and SC1406
up properly even if ENABLE can be active before the system 5V
supply is stable. Alternately, the ENABLE lines of both devices
can be tied together.
The SC1406G provides a low-battery indication with a hysteresis
current feature. That is, when the voltage at the LBIN pin is
above the reference, the input bias current is very low. Once the
threshold (a 1.225V bandgap) is reached and LBIN trips, a
0.6mA to 10mA current source must be overcome by the
battery and divider before the converter is allowed to come on
again. For the sample converter, assume VTRIP = 9.5V. Ignoring
bias currents, and assuming R8=20kW.
U.
R8 + R9
VLBTRIP := VLBREFR8
In the example schematic, R9 = 43kW to accommodate
operation down to 4.5VDC. The rounded value gives a VTRIPLO of
9.62V. In order for LBIN to reset, the current source must be
overpowered, so:
V.
VTRIPHIMAX:=
VLBREF
+
R9 10⋅µA
+
VLBREF
R8
VTRIPHIMAX= 10.986 V
CO is the clock output from the SC1406 to the SC1405.
POWERGOOD is LO (inactive) whenever any of the following
conditions is present:
1 Vcore is more than 10% higher or lower than its set-
point,
2 Either soft-start pin is lower than its threshold
3 Vcc is below the UVLO threshold
4 LBIN is active
POWERGOOD is HI (active) when none of the above is true, as
during normal operating conditions.
SC1405 Design Example:
The main function of SC1405 is to rapidly drive the power
MOSFETs on and off on using a “break before make” algorithm
to prevent cross conduction in the FETs.
FET selection:
W.
V TRIPHIMIN := V LBREF +
R9 6⋅µA +
V LBREF
R8
VTRIPHIMIN = 10.438 V
The hysteresis current, in this case provides a voltage hysteresis
of 0.82V to 1.38V.
C10 provides noise filtering at the LBIN input. The 1nF value is
intended to provide attenuation at the lowest frequency load of
the battery. To disable this feature, tie LBIN (pin 17) to Vcc of
the SC1406 through a resistor (10kW is a good nominal value).
Clamp Design:
The clamp circuit is an open-collector uni-directional level shifter
capable of driving a 16mA load with a 5ns typical delay time.
The duty cycle (d) of the converter is a function of the input
voltage. In most applications, where the converter runs directly
from the battery, AC adapter, or even a regulated +5V source, d
is always going to be much less than 50%. The low-side (or
synchronous) FET, therefore, is conducting most of the time;
further, because the diode clamps the voltage across the low-
side FET, it switches with virtually zero voltage across it. The
high-side (or control) FET conducts for a relatively small amount
of time, but has to switch the entire voltage. Therefore, the
control FET can have a relatively high RDS , (ON) but needs to have
low capacitive losses, and the synchronous FET needs to have a
low RDS , (ON) and can have higher capacitance. To accomplish
this, one can use a single FET type, with two or more in parallel
in the low-side, or one can use FET sets with individually
optimized devices.
ã 2000 Semtech Corp.
18
www.semtech.com

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