GLT6400L08LL-85ST 데이터 시트보기 (PDF) - G-Link Technology

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GLT6400L08LL-85ST

Ultra Low Power 512k x 8 CMOS SRAM

G-Link Technology  

G-LINK

GLT6400L08

Ultra Low Power 512k x 8 CMOS SRAM

Feb 2001(Rev. 1.1)

Absolute Maximum Ratings*

Parameter

Voltage on Any Pin Relative to Gnd

Power Dissipation

Storage Temperature (Plastic)

Temperature Under Bias

Symbol

Vt

PT

Tstg

Tbias

Minimum

-0.5

-

-55

-40

Maximum

Vcc+0.3

1.0

+150

+85

Unit

V

W

°C

°C

*Note : Stresses greater than those listed above Absolute Maximum Ratings may cause permanent damage to the device.

This is a stress rating only and functional operation of the device at these or any conditions outside those indicated

in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for

extended periods may affect reliability.

Recommended Operating Conditions

Parameter

Symbol

Supply Voltage

VCC

Gnd

Input Voltage

VIH

VIL

* VIL min = -1.0V for pulse width less than tRC/2.

Min

2.7

0.0

2.0

-0.5*

Typ

3

0.0

-

-

Max

3.3

0.0

VCC+0.2

0.6

Unit

V

V

V

V

G-Link Technology Corporation

2701 Northwestern Parkway

Santa Clara, CA 95051, U.S.A.

-3-

G-Link Technology Corporation, Taiwan

6F No. 24-2, Industry E. RD. IV, Science Based

Industrial Park, Hsin Chu, Taiwan.

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