RJH60D1DPE-00-J3 데이터 시트보기 (PDF) - Renesas Electronics
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RJH60D1DPE-00-J3 Datasheet PDF : 10 Pages
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RJH60D1DPE
Typical Capacitance vs.
Collector to Emitter Voltage
1000
Tc = 25°C
Cies
100
Coes
10
Cres
VGE = 0 V
f = 1 MHz
1
0 50 100 150 200 250 300
Collector to Emitter Voltage VCE (V)
Reverse Recovery Time vs.
Diode Current Slope (Typical)
300
VCC = 300 V
250
IF = 10 A
200
Tc = 150°C
150
100
25°C
50
0
0
40 80 120 160 200
Diode Current Slope diF/dt (A/μs)
Reverse Recovery Current vs.
Diode Current Slope (Typical)
16
VCC = 300 V
IF = 10 A
12
Tc = 150°C
8
4
25°C
0
0
40 80 120 160 200
Diode Current Slope diF/dt (A/μs)
Preliminary
Dynamic Input Characteristics (Typical)
800
VCC = 300 V
IC = 10 A
Tc = 25°C
600
16
VGE
12
400
8
VCE
200
4
0
0
0
4
8
12 16 20
Gate Charge Qg (nc)
Reverse Recovery Charge vs.
Diode Current Slope (Typical)
1.0
VCC = 300 V
IF = 10 A
0.8
0.6
Tc = 150°C
0.4
0.2
25°C
0
0
40 80 120 160 200
Diode Current Slope diF/dt (A/μs)
Forward Current vs. Forward Voltage (Typical)
50
Tc = 25°C
40
150°C
30
20
10
VCE = 0 V
Pulse Test
0
0
1
2
3
4
C-E Diode Forward Voltage VCEF (V)
R07DS0157EJ0400 Rev.4.00
Apr 19, 2012
Page 6 of 9
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