RJH60D1DPE-00-J3 데이터 시트보기 (PDF) - Renesas Electronics

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RJH60D1DPE-00-J3

600V - 10A - IGBT Application: Inverter

Renesas Electronics 

Preliminary Datasheet

RJH60D1DPE

600V - 10A - IGBT

Application: Inverter

R07DS0157EJ0400

Rev.4.00

Apr 19, 2012

Features

 Short circuit withstand time (5 s typ.)

 Low collector to emitter saturation voltage

VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)

 Built in fast recovery diode (100 ns typ.) in one package

 Trench gate and thin wafer technology

 High speed switching

tf = 75 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 10 A, Rg = 5 , inductive load)

Outline

RENESAS Package code: PRSS0004AE-B

(Package name: LDPAK (S)-(1) )

C

4

123

1. Gate

G

2. Collector

3. Emitter

4. Collecotor

E

Absolute Maximum Ratings

Item

Collector to emitter voltage / diode reverse voltage

Gate to emitter voltage

Collector current

Tc = 25°C

Tc = 100°C

Collector peak current

Collector to emitter diode forward current

Collector to Emitter diode forward peak current

Collector dissipation

Junction to case thermal resistance (IGBT)

Junction to case thermal resistance (Diode)

Junction temperature

Storage temperature

Notes: 1. PW  10 s, duty cycle  1%

2. Value at Tc = 25C

Symbol

VCES / VR

VGES

IC

IC

ic(peak) Note1

iDF

iDF(peak) Note1

PC Note2

j-c Note2

j-cd Note2

Tj

Tstg

Ratings

600

±30

20

10

40

10

40

52

2.38

2.8

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

A

A

A

W

°C/ W

°C/ W

°C

°C

R07DS0157EJ0400 Rev.4.00

Apr 19, 2012

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