R6012ANX(2008) 데이터 시트보기 (PDF) - ROHM Semiconductor
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R6012ANX Datasheet PDF : 6 Pages
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Transistors
zElectrical characteristic curves
100
Operation in this
area is limited
10 by RDS(ON)
PW=100us
PW=1ms
1
DC operation
0.1
Ta = 25°C
Single Pulse
0.01
0.1
1
10
100
1000
DRAIN-SOURCE VOLTAGE : VDS ( V )
Fig.1 Maximum Safe Operating Aera
40
10V
8.0V
Ta= 25°C
Pulsed
30
7.0V
6.5V
20
6.0V
10
5.0V
VGS= 4.5V
0
0
10
20
30
40
50
DRAIN-SOURCE VOLTAGE: VDS (V)
Fig.2: Typical Output Characteristics(Ⅰ)
R6012ANX
20
Ta= 25°C
Pulsed
10V
15
8.0V
7.0V
6.5V
10
6.0V
5.5V
5.0V
5
VGS= 4.5V
0
0
1
2
3
4
5
DRAIN-SOURCE VOLTAGE: VDS (V)
Fig.3: Typical Output Characteristics(Ⅱ)
100
VDS= 10V
Pulsed
10
Ta= 125°C
Ta= 75°C
Ta= 25°C
1 Ta= -25°C
0.1
0.01
01 2345 67
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Typical Transfer Characteristics
6
VDS= 10V
5 ID= 1mA
4
3
2
1
0
-50
0
50
100
150
CHANNEL TEMPERATURE: Tch (°C)
Fig.5 Gate Threshold Voltage
vs. Channel Temperature
10
VGS= 10V
Pulsed
1
0.1
0.01
0.001 0.01 0.1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
1
10
100
DRAIN CURRENT : ID (A)
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current
0.8
Ta=25°C
Pulsed
0.6
ID=12A
0.4
ID=6A
0.2
0
0
5
10
15
GATE-SOURCE VOLTAGE : VGS (V)
Fig.7 Static Drain-Source On-State
Resistance vs. Gate Source
0.8
VGS= 10V
Pulsed
0.6
0.4
0.2
ID= 12A
ID= 6A
0
-50
0
50
100
150
CHANNEL TEMPERATURE: Tch (°C)
Fig.8 Static Drain-Source On-State
Resistance vs. Channel Temperature
100
10
VDS= 10V
Pulsed
1
0.1
Ta= -25°C
Ta= 25°C
Ta= 75°C
0.01
Ta= 125°C
0.001
0.001 0.01 0.1
1
10
100
DRAIN CURRENT : ID (A)
Fig.9 Forward Transfer Admittance
vs. Drain Current
3/5
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