R6012ANX(2008) 데이터 시트보기 (PDF) - ROHM Semiconductor

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R6012ANX
(Rev.:2008)

10V Drive Nch MOSFET

ROHM Semiconductor 

Transistors

zThermal resistance

Parameter

Channel to case

Symbol

Rth(ch-c)

Limits

2.5

Unit

°C/W

R6012ANX

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max. Unit

Conditions

Gate-source leakage

IGSS

−

− ±100 nA VGS=±30V, VDS=0V

Drain-source breakdown voltage V(BR)DSS 600

−

−

V ID=1mA, VGS=0V

Zero gate voltage drain current

IDSS

−

−

100 µA VDS=600V, VGS=0V

Gate threshold voltage

VGS(th)

2.5

− 4.5

V VDS=10V, ID=1mA

Static drain-source on-state resistance

RDS(on) ∗

−

0.32 0.42

Ω ID=6A, VGS=10V

Forward transfer admittance

| Yfs | ∗ 3.5

−

−

S ID=6A, VDS=10V

Input capacitance

Ciss

− 1300 −

pF VDS=25V

Output capacitance

Coss

−

890

−

pF VGS=0V

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

Gate-source charge

Gate-drain charge

Crss

−

td(on) ∗

−

tr ∗ −

td(off) ∗

−

tf ∗ −

Qg ∗ −

Qgs ∗

−

Qgd ∗

−

45

−

30

−

30

−

90

−

35

−

35

−

7

−

15

−

pF f=1MHz

ns ID=6A, VDD 300V

ns VGS=10V

ns RL=50Ω

ns RG=10Ω

nC VDD 300V

ID=12A

nC VGS=10V

nC RL=25Ω / RG=10Ω

∗ Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter

Forward voltage

∗ Pulsed

Symbol Min. Typ. Max. Unit

Conditions

VSD ∗

−

− 1.5 V IS= 12A, VGS=0V

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