BCW65 데이터 시트보기 (PDF) - Siemens AG

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BCW65

NPN Silicon AF Transistors

Siemens AG 

BCW 65

BCW 66

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Collector-emitter saturation voltage1)

IC = 100 mA, IB = 10 mA

IC = 500 mA, IB = 50 mA

Base-emitter saturation voltage1)

IC = 100 mA, IB = 10 mA

IC = 500 mA, IB = 50 mA

AC characteristics

Transition frequency

IC = 50 mA, VCE = 5 V, f = 20 MHz

Output capacitance

VCB = 10 V, f = 1 MHz

Input capacitance

VEB = 0.5 V, f = 1 MHz

Symbol

Values

Unit

min. typ. max.

VCEsat

V

–

–

0.3

–

–

0.7

VBEsat

–

–

1.25

–

–

2

fT

–

Cobo

–

Cibo

–

170 –

6

–

60 –

MHz

pF

1) Pulse test: t ≤ 300 µs, D = 2 %.

Semiconductor Group

4

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