BCW65 데이터 시트보기 (PDF) - Siemens AG

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BCW65

NPN Silicon AF Transistors

Siemens AG 

BCW 65

BCW 66

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Collector-emitter breakdown voltage

IC = 10 mA

BCW 65

BCW 66

Collector-base breakdown voltage

IC = 10 µA

BCW 65

BCW 66

Emitter-base breakdown voltage, IE = 10 µA

Collector cutoff current

VCB = 32 V

VCB = 45 V

VCB = 32 V, TA = 150 ˚C

VCB = 45 V, TA = 150 ˚C

BCW 65

BCW 66

BCW 65

BCW 66

Emitter-base cutoff current, VEB = 4 V

DC current gain1)

IC = 100 µA, VCE = 10 V

BCW 65 A, BCW 66 F

BCW 65 B, BCW 66 G

BCW 65 C, BCW 66 H

IC = 10 mA, VCE = 1 V

BCW 65 A, BCW 66 F

BCW 65 B, BCW 66 G

BCW 65 C, BCW 66 H

IC = 100 mA, VCE = 1 V

BCW 65 A, BCW 66 F

BCW 65 B, BCW 66 G

BCW 65 C, BCW 66 H

IC = 500 mA, VCE = 2 V

BCW 65 A, BCW 66 F

BCW 65 B, BCW 66 G

BCW 65 C, BCW 66 H

Symbol

Values

Unit

min. typ. max.

V(BR)CE0

V

32

–

–

45

–

–

V(BR)CB0

60

–

75

–

V(BR)EB0 5

–

ICB0

–

–

–

–

–

–

–

–

IEB0

–

–

hFE

–

–

–

20 nA

20 nA

20

µA

20

µA

20 nA

–

35

–

–

50

–

–

80

–

–

75

–

–

110 –

–

180 –

–

100 160 250

160 250 400

250 350 630

35

–

–

60

–

–

100 –

–

1) Pulse test: t ≤ 300 µs, D = 2 %.

Semiconductor Group

3

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