PBYR2150CT 데이터 시트보기 (PDF) - Philips Electronics
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PBYR2150CT Datasheet PDF : 5 Pages
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Philips Semiconductors
Schottky barrier double diode
Preliminary specification
PBYR2150CT
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
Tstg
Tj
Tamb
storage temperature
junction temperature
operating ambient temperature
−65
+150
°C
−65
+150
°C
−
80
°C
Notes
1. Refer to SOT223 standard mounting conditions.
2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses
PR and IF(AV) rating will be available on request.
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
VF
forward voltage
IR
reverse current
Cd
diode capacitance
Note
1. Pulsed test: tp = 300 µs; δ = 0.02.
CONDITIONS
see Fig.2
IF = 0.1 A; note 1
IF = 0.5 A; note 1
IF = 1 A; note 1
IF = 1 A; Tj = 100 °C; note 1
VR = VRRMmax; note 1; see Fig.3
VR = VRRMmax; Tj = 100 °C; note 1;
see Fig.3
VR = 4 V; f = 1 MHz; see Fig.4
MAX.
UNIT
400
mV
650
mV
850
mV
690
mV
1
mA
10
mA
100
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Refer to SOT223 standard mounting conditions.
CONDITIONS
note 1
VALUE
70
UNIT
K/W
1996 Oct 14
3
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