Philips Semiconductors
Schottky barrier double diode
Preliminary specification
PBYR2150CT
FEATURES
• Low switching losses
• Low forward voltage
• High breakdown voltage
• Fast recovery time
• Guard ring protected
• Plastic SMD package.
APPLICATIONS
• Low power, switched-mode
power supplies
• Rectification
• Polarity protection.
PINNING
PIN
1
2
3
4
DESCRIPTION
anode (a1)
common cathode
anode (a2)
common cathode
DESCRIPTION
The PBYR2150CT is a Schottky barrier double diode, fabricated in planar
technology, and encapsulated in a SOT223 plastic SMD package.
4
1
2
3
Top view
4
1
3
2
MAM086
Marking code: BYR215.
Fig.1 Simplified outline (SOT223), pin configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
VR
VRRM
VRWM
IF(AV)
IFSM
continuous reverse voltage
repetitive peak reverse voltage
crest working reverse voltage
average forward current
Tamb = 85 °C; Rth j-a = 70 K/W;
note 1; VR(equiv) = 0.2 V; note 2
non-repetitive peak forward current t = 8.3 ms half sinewave;
JEDEC method
MIN.
−
−
−
−
−
MAX.
UNIT
150
V
150
V
150
V
1
A
10
A
1996 Oct 14
2