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PBYR2150CT 데이터 시트보기 (PDF) - Philips Electronics

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PBYR2150CT
Philips
Philips Electronics Philips
PBYR2150CT Datasheet PDF : 5 Pages
1 2 3 4 5
Philips Semiconductors
Schottky barrier double diode
Preliminary specification
PBYR2150CT
FEATURES
Low switching losses
Low forward voltage
High breakdown voltage
Fast recovery time
Guard ring protected
Plastic SMD package.
APPLICATIONS
Low power, switched-mode
power supplies
Rectification
Polarity protection.
PINNING
PIN
1
2
3
4
DESCRIPTION
anode (a1)
common cathode
anode (a2)
common cathode
DESCRIPTION
The PBYR2150CT is a Schottky barrier double diode, fabricated in planar
technology, and encapsulated in a SOT223 plastic SMD package.
4
1
2
3
Top view
4
1
3
2
MAM086
Marking code: BYR215.
Fig.1 Simplified outline (SOT223), pin configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
VR
VRRM
VRWM
IF(AV)
IFSM
continuous reverse voltage
repetitive peak reverse voltage
crest working reverse voltage
average forward current
Tamb = 85 °C; Rth j-a = 70 K/W;
note 1; VR(equiv) = 0.2 V; note 2
non-repetitive peak forward current t = 8.3 ms half sinewave;
JEDEC method
MIN.
MAX.
UNIT
150
V
150
V
150
V
1
A
10
A
1996 Oct 14
2

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