B80NF06 데이터 시트보기 (PDF) - STMicroelectronics

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B80NF06

N-channel 60V - 0.0065Ω- 80A TO-220/D² PAK/TO- 247 STripFET II™ Power MOSFET

STMicroelectronics 

STP80NF06 - STB80NF06 - STW80NF06

Electrical characteristics

Table 6. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM (1)

VSD (2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 80A, VGS = 0

ISD = 80A, VDD = 50V

di/dt = 100A/µs,

Tj = 150°C

(see Figure 15)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Min. Typ. Max Unit

80 A

320 A

1.5 V

80

ns

250

nC

6.4

A

5/14

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