B80NF06 데이터 시트보기 (PDF) - STMicroelectronics

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B80NF06

N-channel 60V - 0.0065Ω- 80A TO-220/D² PAK/TO- 247 STripFET II™ Power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STP80NF06 - STB80NF06 - STW80NF06

(TCASE=25°C unless otherwise specified)

Table 3. On/off states

Symbol

Parameter

Drain-source

V(BR)DSS Breakdown voltage

Zero gate voltage

IDSS Drain current (VGS = 0)

IGSS

VGS(th)

RDS(on)

Gate-body leakage

current (VDS = 0)

Gate threshold voltage

Static drain-source on

resistance

Test conditions

ID = 250 µA, VGS = 0

VDS = Max rating

VDS=Max rating,

TC=125°C

VGS = ±20V

VDS = VGS, ID = 250µA

VGS = 10V, ID = 40A

Min. Typ. Max. Unit

60

V

1 µA

10 µA

±100 nA

2

3

4

V

0.0065 0.008 Ω

Table 4. Dynamic

Symbol

Parameter

Test conditions

gfs (1)

Ciss

Coss

Crss

Forward transconductance

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 2.5V, ID=18A

VDS = 25V, f = 1 MHz,

VGS = 0

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 80V, ID = 80A,

VGS = 10V

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Min. Typ. Max. Unit

20

S

3850

pF

800

pF

250

pF

115 150 nC

24

nC

46

nC

Table 5. Switching times

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

td(on)

tr

Turn-on delay time

Rise time

td(off)

tf

td(off)

tf

tc

Turn-off-delay time

Fall time

Off-voltage Rise Time

Fall Time

Cross-over Time

VDD = 27V, ID = 40A

RG = 4.7Ω VGS = 10V

(see Figure 13)

VDD = 27V, ID = 40A,

RG = 4.7Ω, VGS = 10V

(see Figure 13)

Vclamp =44V, ID =80A

RG = 4.7Ω, VGS = 10V

(see Figure 15)

25

ns

85

ns

ns

70

ns

25

85

ns

75

ns

110

ns

4/14

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