Preliminary Information
MT9123
Absolute Maximum Ratings*
Parameter
Symbol
Min
Max
1 Supply Voltage
VDD-VSS
-0.3
7.0
2 Voltage on any digital pin
Vi/o
VSS-0.3
VDD+ 0.3
3 Continuous Current on any digital pin
Ii/o
±20
4 Storage Temperature
TST
-65
150
5 Package Power Dissipation
PD
500
* Exceeding these values may cause permanent damage. Functional operation under these conditions is not implied.
Units
V
V
mA
°C
mW
Recommended Operating Conditions - Voltages are with respect to ground (VSS) unless otherwise stated.
Characteristics
Sym Min Typ‡ Max Units
Test Conditions
1 Supply Voltage
VDD 4.5 5.0 5.5
V
2 TTL Input High Voltage
2.4
VDD
V 400mV noise margin
3 TTL Input Low Voltage
VSS
0.4
V 400mV noise margin
4 CMOS Input High Voltage
4.5
VDD
V
5 CMOS Input Low Voltage
VSS
0.5
V
6 Operating Temperature
TA
-40
+85 °C
‡ Typical figures are at 25°C and are for design aid only: not guaranteed and not subject to production testing.
DC Electrical Characteristics* - Voltages are with respect to ground (VSS) unless otherwise stated.
Characteristics
Sym Min Typ‡ Max Units
Conditions/Notes
1 Supply Current
ICC
100 µA PWRDN = 0
IDD
50
mA PWRDN = 1, clocks active
2 Input HIGH voltage (TTL)
VIH
2.0
V All except MCLK,Sin,Rin
3 Input LOW voltage (TTL)
VIL
0.8
V All except MCLK,Sin,Rin
4 Input HIGH voltage (CMOS)
VIHC 3.5
V MCLK,Sin,Rin
5 Input LOW voltage (CMOS)
6 Input leakage current
VILC
IIH/IIL
1.5
V MCLK,Sin,Rin
0.1
10
µA VIN=VSS to VDD
7 High level output voltage
VOH 0.9VDD
V IOH=2.5mA
8 Low level output voltage
VOL
9 High impedance leakage
IOZ
0.1VDD V IOL=5.0mA
1
10
µA VIN=VSS to VDD
10 Output capacitance
Co
10
pF
11 Input capacitance
Ci
8
pF
12 PWRDN
Positive Threshold Voltage
V+ 3.75
V
Hysteresis
VH
Negative Threshold Voltage
V-
1.0
V
1.25
V
‡ Typical figures are at 25°C and are for design aid only: not guaranteed and not subject to production testing.
* DC Electrical Characteristics are over recommended temperature and supply voltage.
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