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PS11017 Datasheet PDF : 6 Pages
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PRELIMINARY NSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.
MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS11017
FLAT-BASE TYPE
INSULATED TYPE
TOTAL SYSTEM
Symbol
Item
Condition
Ratings
Unit
Tj
Junction temperature
(Note 2)
–20 ~ +125
°C
Tstg
Storage temperature
—
–40 ~ +125
°C
TC
Module case operating temperature
(Fig. 3)
–20 ~ +100
°C
Viso
Isolation voltage
60 Hz sinusoidal AC applied between all terminals and
the base plate for 1 minute.
2500
Vrms
Mounting torque
Mounting screw: M4.0
0.98 ~ 1.47
N·m
Note 2) The item defines the maximum junction temperature for the power elements (IGBT/Diode) of the ASIPM to ensure safe operation. How-
ever, these power elements can endure instantaneous junction temperature as high as 150°C instantaneously . To make use of this ad-
ditional temperature allowance, a detailed study of the exact application conditions is required and, accordingly, necessary information
is requested to be provided before use.
CASE TEMPERATURE MEASUREMENT POINT (3mm from the base surface)
THERMAL RESISTANCE
LABEL
Tc
(Fig. 3)
Symbol
Item
Rth(j-c)Q
Rth(j-c)F
Rth(j-c)Q
Rth(j-c)F
Rth(c-f)
Junction to case Thermal
Resistance
Contact Thermal Resistance
Condition
Inverter IGBT (1/6)
Inverter FWDi (1/6)
Brake IGBT
Brake FWDi
Case to fin, thermal grease applied
Ratings
Min.
Typ.
Max. Unit
—
—
1.75 °C/W
—
—
2.4 °C/W
—
—
2.9 °C/W
—
—
4.5 °C/W
—
—
0.031 °C/W
ELECTRICAL CHARACTERISTICS (Tj = 25°C, VDH = 15V, VDB = 15V unless otherwise noted)
Symbol
Item
Condition
Ratings
Min.
Typ.
Max. Unit
VCE(sat) Collector-emitter saturation voltage VDH = VDB = 15V, Input = ON, Tj = 25°C, Ic = 50A
—
—
2.9
V
VEC
FWDi forward voltage
Tj = 25°C, Ic = –50A, Input = OFF
—
—
2.9
V
VCE(sat)Br
Brake IGBT
Collector-emitter saturation voltage
VDH = 15V, Input = ON, Tj = 25°C, Ic = 15A
—
—
3.5
V
VFBr
Brake diode forward voltage Tj = 25°C, IF = 15A, Input = OFF
—
—
2.9
V
ton
1/2 Bridge inductive, Input = ON
0.40
0.8
2.0
µs
tc(on)
toff
Switching times
VCC = 300V, Ic = 50A, Tj = 125°C
VDH = 15V, VDB = 15V
—
0.40
1.0
µs
—
1.5
2.4
µs
tc(off)
Note : ton, toff include delay time of the internal control
—
0.6
1.3
µs
trr
FWD reverse recovery time
circuit
—
0.15
—
µs
Short circuit endurance
(Output, Arm, and Load,
Short Circuit Modes)
VCC ≤ 400V, Input = ON (one-shot)
Tj = 125°C start
13.5V ≤ VDH = VDB ≤ 16.5V
• No destruction
• FO output by protection operation
Switching SOA
VCC ≤ 400V, Tj ≤ 125°C,
Ic < IOL(CL) operation level, Input = ON,
13.5V ≤ VDH = VDB ≤ 16.5V
• No destruction
• No protecting operation
• No FO output
IDH
Circuit current
VDH = 15V, VCIN = 5V
—
—
150 mA
Vth(on)
Vth(off)
Ri
Input on threshold voltage
Input off threshold voltage
Input pull-up resister
Integrated between input terminal-VDH
0.8
1.4
2.0
V
2.5
3.0
4.0
V
—
150
—
kΩ
Jan. 2000
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