MCM6949YJ10R 데이터 시트보기 (PDF) - Motorola => Freescale

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MCM6949YJ10R

1M x 4 Bit Static Random Access Memory

Motorola => Freescale 

TRUTH TABLE (X = Don’t Care)

E

G

W

Mode

H

X

X

Not Selected

L

H

H

Output Disabled

L

L

H

Read

L

X

L

Write

I/O Pin

High–Z

High–Z

Dout

High–Z

Cycle

—

—

Read

Write

Current

ISB1, ISB2

ICCA

ICCA

ICCA

ABSOLUTE MAXIMUM RATINGS (See Note)

Rating

Symbol

Value

Unit

Power Supply Voltage Relative to VSS

Voltage Relative to VSS for Any Pin

Except VCC

VCC

– 0.5 to + 5.0

V

Vin, Vout – 0.5 to VCC + 0.5 V

Output Current (per I/O)

Iout

± 20

mA

Power Dissipation

PD

1.0

W

Temperature Under Bias

Tbias

– 10 to + 85

°C

Operating Temperature

TA

0 to + 70

°C

Storage Temperature — Plastic

Tstg

– 55 to + 150

°C

NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are

exceeded. Functional operation should be restricted to RECOMMENDED OPER-

ATING CONDITIONS. Exposure to higher than recommended voltages for

extended periods of time could affect device reliability.

This device contains circuitry to protect the

inputs against damage due to high static volt-

ages or electric fields; however, it is advised

that normal precautions be taken to avoid

application of any voltage higher than maxi-

mum rated voltages to these high–impedance

circuits.

This BiCMOS memory circuit has been

designed to meet the dc and ac specifications

shown in the tables, after thermal equilibrium

has been established. The circuit is in a test

socket or mounted on a printed circuit board and

transverse air flow of at least 500 linear feet per

minute is maintained.

MCM6949

4

MOTOROLA FAST SRAM

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