MC9S08QA2(2008) 데이터 시트보기 (PDF) - Freescale Semiconductor

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MC9S08QA2
(Rev.:2008)

8-bit HCS08 Central Processor Unit (CPU)

Freescale Semiconductor 

Electrical Characteristics

A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device specification. Complete

DC parametric and functional testing is performed per the applicable device specification at room temperature followed by hot

temperature, unless specified otherwise in the device specification.

Table 4. ESD and Latch-up Test Conditions

Model

Description

Symbol

Value

Unit

Series resistance

R1

Human

Body

Storage capacitance

C

Number of pulses per pin

1500

Ω

100

pF

3

Series resistance

R1

0

Ω

Machine Storage capacitance

C

200

pF

Number of pulses per pin

3

Minimum input voltage limit

Latch-up

Maximum input voltage limit

–2.5

V

7.5

V

Table 5. ESD and Latch-Up Protection Characteristics

No.

Rating1

Symbol

Min

Max

Unit

1

Human body model (HBM)

VHBM

±2000

—

V

2

Machine model (MM)

VMM

±200

—

V

3

Charge device model (CDM)

VCDM

±500

—

V

4

Latch-up current at TA = 85°C

ILAT

±100

—

mA

1 Parameter is achieved by design characterization on a small sample size from typical devices

under typical conditions unless otherwise noted.

3.5 DC Characteristics

This section includes information about power supply requirements and I/O pin characteristics.

Table 6. DC Characteristics (Temperature Range = –40 to 85°C Ambient)

Parameter

Supply voltage (run, wait, and stop modes)

Symbol

(VDD falling)

VDD

(VDD rising)

Minimum RAM retention supply voltage applied to VDD

Low-voltage detection threshold

(VDD falling)

(VDD rising)

Low-voltage warning threshold

(VDD falling)

VRAM

VLVD

VLVW

Min

1.8

VLVDL

(rising)

Vpor1,2

1.80

1.88

2.08

Typical

—

—

—

1.82

1.90

2.1

Max

Unit

3.6

V

3.6

—

V

1.91

V

1.99

2.2

V

MC9S08QA4 Series, Rev. 2

Freescale Semiconductor

7

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