MC33365(2006) 데이터 시트보기 (PDF) - ON Semiconductor
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MC33365 Datasheet PDF : 11 Pages
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MC33365
0
2.0
VCC = 20 V
RT = 10 k
−20
CPin 8 = 1.0 μF
TA = 25°C
−40
1.0
VPin 1 = 400 V
TA = 25°C
−60
−80
0
4.0
8.0
12
16
20
Ireg, REGULATOR SOURCE CURRENT (mA)
Figure 10. Regulator Output Voltage
Change versus Source Current
Pulse tested with an on−time of 20 μs to 300 μs
at < 1.0% duty cycle. The on−time is adjusted at
Pin 1 for a maximum peak current out of Pin 3.
0
0
2.0 4.0 6.0 8.0
10
12
14
VCC, POWER SUPPLY VOLTAGE (V)
Figure 11. Peak Startup Current
versus Power Supply Voltage
32
ID = 200 mA
24
16
8.0
0
−50 −25
Pulse tested at 5.0 ms with < 1.0% duty cycle
so that TJ is as close to TA as possible.
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 12. Power Switch Drain−Source
On−Resistance versus Temperature
160
VCC = 20 V
TA = 25°C
120
80
40
COSS measured at 1.0 MHz with 50 mVpp.
0
1.0
10
100
1000
VDS, DRAIN−SOURCE VOLTAGE (V)
Figure 13. Power Switch
Drain−Source Capacitance versus Voltage
3.2
CT = 390 pF
2.4
CT = 2.0 nF
1.6
RT = 10 k
0.8
Pin 1 = Open
Pin 4, 5, 10, 11,
12, 13 = Gnd
TA = 25°C
0
0
10
20
30
40
VCC, SUPPLY VOLTAGE (V)
Figure 14. Supply Current versus Supply Voltage
100
L = 12.7 mm of 2.0 oz. copper.
Refer to Figure 15.
10
1.0
0.01
0.1
1.0
10
100
t, TIME (s)
Figure 15. P Suffix Transient Thermal
Resistance
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