MSK4364(2011) 데이터 시트보기 (PDF) - M.S. Kennedy
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MSK4364 Datasheet PDF : 7 Pages
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ABSOLUTE MAXIMUM RATINGS 8
V+
VIN
+Vcc
-Vcc
VLOGIC
IOUT
IPK
θJC
9 High Voltage Supply 55V ○
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Current Command Input ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ±13.5V
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○ +16V
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○ -18V
Logic Input ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ -0.2V to REFOUT
Continuous Output Current ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 5A
Peak Output Current 10A ○
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Thermal Resistance @ 25°C
(Junction To Case) ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 11°C/W
TST Storage Temperature Range ○ ○ ○ ○ ○ ○ ○ ○ -65°C to +150°C
TLD Lead Temperature Range ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○+300°C
(10 Seconds)
TC Case Operating Temperature ○ ○ ○ ○ ○ ○ ○ -55°C to +125°C
TJ Junction Temperature ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ +150°C
ELECTRICAL SPECIFICATIONS
All Ratings: Tc=+25°C Unless Otherwise Specified
Parameter
Test Conditions
Group A
Subgroup
MSK 4364H 3
4 5 Min. Typ. Max.
MSK 4364 2
Min. Typ. Max.
Units
POWER SUPPLY REQUIREMENTS
+Vcc
@ +15V
1,2,3
-
60
85
-
60
85
mA
-Vcc
@ -15V
1,2,3
-
30
40
-
30
40
mA
PWM
Free Running Frequency
4
21
22
23
20
22
5,6
18.7
-
25.3
-
-
24
KHz
-
KHz
CONTROL
Transconductance 7
±5 Amps Output
4,5,6 0.95
1
1.05
0.9
1
1.1 Amp/Volt
Current Monitor 7
±5 Amps Output
4,5,6
0.9
1
1.1
0.9
1
1.1 V/Amp
Output Offset
@ 0 Volts Command
4
-
±5.0 ±25.0
-
±5.0 ±35.0 mAmp
5,6
-
±75 ±150
-
-
-
mAmp
HALL INPUTS
Low Level Input Voltage 1
-
-
-
0.8
-
-
0.8
Volts
High Level Input Voltage 1
-
3.0
-
-
3.0
-
-
Volts
ERROR AMP
Input Voltage Range 1
-
±11 ±12
-
±11 ±12
-
Volts
Slew Rate 1
-
6.5
8
-
6.5
8
-
V/μSec
Output Voltage Swing 1
-
±12 ±13
-
±12 ±13
-
Volts
Gain Bandwidth Product 1
-
-
6.5
-
-
6.5
-
MHz
Large Signal Voltage Gain 1
-
175
275
-
175 275
-
V/mV
OUTPUT
Rise Time 1
-
-
100
-
-
100
-
nSec
Fall Time 1
-
-
100
-
-
100
-
nSec
Leakage Current 1
@ 44V, +150°C Junction
-
-
-
750
-
-
750 μAmps
Voltage Drop Across Bridge (1 Upper and 1 Lower) 1
@ 5 Amps
-
-
-
0.6
-
-
0.6
Volts
Voltage Drop Across Bridge (1 Upper and 1 Lower) 1 @ 5 Amps, +150°C Junction
-
-
-
1.2
-
-
1.2
Volts
Drain-Source On Resistance (Each MOSFET) 6
@ 5 Amps, 150°C Junction
-
-
-
0.10
-
-
0.10
Ω
Diode VSD 1
@ 5 Amps, Each FET
-
-
-
1.6
-
-
1.6
Volts
trr 1
IF=5 Amps, di/dt=100A/μS
-
-
280
-
-
280
-
nSec
Dead Time 1
-
-
2
-
-
2
-
μSec
REFERENCE
Refout
15mA Load
1,2,3 5.82
-
6.57
5.82
-
6.57 Volts
LOGIC INPUTS (HALL A,B,C,BRAKE,60°/120°)
VIL 1
-
-
-
0.8
-
-
0.8
Volts
VIH 1
-
3.0
-
-
3.0
-
-
Volts
LOGIC INPUTS (DIS)
VIL
-
-
-
3.0
-
-
3.0
Volts
VIH
NOTES:
-
12.0
-
-
12.0
-
-
Volts
1 Guaranteed by design but not tested. Typical parameters are representative of actual device performance but are for reference only.
2 Industrial grade devices shall be tested to subgroups 1 and 4 unless otherwise specified.
3 Military grade devices ("H" Suffix) shall be 100% tested to Subgroups 1, 2, 3 and 4.
4 Subgroups 5 and 6 testing available upon request.
5 Subgroup 1, 4 TA = TC = +25°C
2, 5 TA = TC = +125°C
3, 6 TA = TC = -55°C
6 This is to be used for MOSFET thermal calculation only.
7 Measurements do not include offset current at 0V current command.
8 Continuous operation at or above absolute maximum ratings may adversely effect the device performance and/or life cycle.
9 When applying power to the device, apply the low voltage followed by the high voltage or alternatively, apply both at the same time.
Do not apply high voltage without low voltage present.
2
Rev. G 2/11
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