LT5558 데이터 시트보기 (PDF) - Linear Technology
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LT5558 Datasheet PDF : 16 Pages
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LT5558
ELECTRICAL CHARACTERISTICS VCC = 5V, EN = High, TA = 25°C, fLO = 900MHz, fRF = 902MHz,
PLO = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 2.1VDC, baseband input frequency = 2MHz, I and Q 90° shifted
(upper sideband selection). PRF(OUT) = –10dBm, unless otherwise noted. (Note 3)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
S11, ON
LO Input Return Loss
EN = High (Note 6)
–10.6
S11, OFF
LO Input Return Loss
EN = Low (Note 6)
–2.5
NFLO
LO Input Referred Noise Figure
(Note 5) at 900MHz
14.6
GLO
LO to RF Small-Signal Gain
(Note 5) at 900MHz
16.4
IIP3LO
LO Input 3rd Order Intercept
(Note 5) at 900MHz
–3.3
Baseband Inputs (BBPI, BBMI, BBPQ, BBMQ)
BWBB
Baseband Bandwidth
–3dB Bandwidth
400
VCMBB
DC Common-mode Voltage
(Note 4)
2.1
RIN, DIFF
Differential Input Resistance
Between BBPI and BBMI (or BBPQ and BBMQ)
3
RIN, CM
Common Mode Input Resistance
(Note 20)
100
ICM, COMP
Common Mode Compliance Current range (Notes 18, 20)
–820 to 440
PLO-BB
Carrier Feedthrough on BB
POUT = 0 (Note 4)
–46
IP1dB
Input 1dB compression point
Differential Peak-to-Peak (Notes 7, 19)
3.4
ΔGI/Q
I/Q Absolute Gain Imbalance
0.05
ΔϕI/Q
I/Q Absolute Phase Imbalance
0.2
Power Supply (VCC)
VCC
ICC(ON)
ICC(OFF)
Supply Voltage
Supply Current
Supply Current, Sleep mode
EN = High
EN = 0V
4.5
5
5.25
108
135
0.1
50
tON
Turn-On Time
EN = Low to High (Note 11)
0.3
tOFF
Turn-Off Time
EN = High to Low (Note 12)
1.1
Enable (EN), Low = Off, High = On
Enable
Input High Voltage
Input High Current
EN = High
EN = 5V
1
230
Shutdown
Input Low Voltage
EN = Low
0.5
UNITS
dB
dB
dB
dB
dBm
MHz
V
kΩ
Ω
μA
dBm
VP-P,DIFF
dB
Deg
V
mA
μA
μs
μs
V
μA
V
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: Specifications over the –40°C to 85°C temperature range are
assured by design, characterization and correlation with statistical process
controls.
Note 3: Tests are performed as shown in the configuration of Figure 7.
Note 4: At each of the four baseband inputs BBPI, BBMI, BBPQ and BBMQ.
Note 5: VBBPI - VBBMI = 1VDC, VBBPQ - VBBMQ = 1VDC.
Note 6: Maximum value within –1dB bandwidth.
Note 7: An external coupling capacitor is used in the RF output line.
Note 8: At 20MHz offset from the LO signal frequency.
Note 9: At 20MHz offset from the CW signal frequency.
Note 10: At 5MHz offset from the CW signal frequency.
Note 11: RF power is within 10% of final value.
Note 12: RF power is at least 30dB lower than in the ON state.
Note 13: Baseband is driven by 2MHz and 2.1MHz tones. Drive level is set
in such a way that the two resulting RF tones are –10dBm each.
Note 14: IM2 measured at LO frequency + 4.1MHz
Note 15: IM3 measured at LO frequency + 1.9MHz and LO frequency +
2.2MHz.
Note 16: Amplitude average of the characterization data set without image
or LO feedthrough nulling (unadjusted).
Note 17: The difference in conversion gain between the spurious signal at
f = 3 • LO - BB versus the conversion gain at the desired signal at f = LO +
BB for BB = 2MHz and LO = 900MHz.
Note 18: Common mode current range where the common mode (CM)
feedback loop biases the part properly. The common mode current is the
sum of the current flowing into the BBPI (or BBPQ) pin and the current
flowing into the BBMI (or BBMQ) pin.
Note 19: The input voltage corresponding to the output P1dB.
Note 20: BBPI and BBMI shorted together (or BBPQ and BBMQ shorted
together).
5558fa
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