L6206Q 데이터 시트보기 (PDF) - STMicroelectronics

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L6206Q

DMOS dual full bridge driver

STMicroelectronics 

L6206Q

Electrical characteristics

Symbol

Table 4. Electrical characteristics (continued)

Parameter

Test condition

Min. Typ. Max. Unit

tD(off)IN

tFALL

tDT

fCP

Input pin to out, turn OFF delay time

Output fall time(2)

Deadtime protection

Charge pump frequency

Overcurrent detection

ILOAD = 2.5 A, resistive load

ILOAD = 2.5 A, resistive load

-25 °C < Tj < 125 °C

600

ns

40

250 ns

0.5 1

µs

0.6 1 MHz

Is over

Input supply overcurrent detection

threshold

-25 °C < Tj < 125 °C; RCL = 39 k

-25 °C < Tj < 125 °C; RCL = 5 k

-25 °C < Tj <125 °C; RCL = GND

ROPDR Open-drain ON resistance

tOCD(ON) OCD turn-on delay time(3)

tOCD(OFF) OCD turn-off delay time(3)

I = 4 mA

I = 4 mA; CEN < 100 pF

I = 4 mA; CEN < 100 pF

1. Tested at 25 °C in a restricted range and guaranteed by characterization.

2. See Figure 3.

3. See Figure 4.

0.57

A

4.42

A

5.6

A

40 60 

200

ns

100

ns

Figure 3. Switching characteristic definition

EN

Vth(ON)

Vth(OFF)

IOUT

90%

10%

D01IN1316

tD(OFF)EN

tFALL

t

tD(ON)EN

t

tRISE

AM02557v1

DocID022028 Rev 3

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