L6206Q 데이터 시트보기 (PDF) - STMicroelectronics
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L6206Q Datasheet PDF : 27 Pages
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Electrical characteristics
3
Electrical characteristics
L6206Q
VS = 48 V, TA = 25 °C, unless otherwise specified.
Symbol
Table 4. Electrical characteristics
Parameter
Test condition
VSth(ON) Turn-on threshold
VSth(OFF) Turn-off threshold
IS
Quiescent supply current
All bridges
125 °C(1)
OFF;
Tj
=
-25
°C
to
Tj(OFF) Thermal shutdown temperature
Output DMOS transistors
High-side switch ON resistance
RDS(ON)
Low-side switch ON resistance
IDSS Leakage current
Tj = 25 °C
Tj =125 °C(1)
Tj = 25 °C
Tj =125 °C(1)
EN = low; OUT = VS
EN = low; OUT = GND
Source drain diodes
VSD Forward ON voltage
trr
Reverse recovery time
tfr
Forward recovery time
ISD = 2.5 A, EN = LOW
If = 2.5 A
Logic input
VIL
VIH
IIL
IIH
Vth(ON)
Vth(OFF)
Vth(HYS)
Low level logic input voltage
High level logic input voltage
Low level logic input current
High level logic input current
Turn-on input threshold
Turn-off input threshold
Input threshold hysteresis
GND logic input voltage
7 V logic input voltage
Switching characteristics
tD(on)EN
tD(on)IN
tRISE
tD(off)EN
Enable pin to out, turn ON delay time(2) ILOAD = 2.5 A, resistive load
Input pin to out, turn ON delay time
ILOAD = 2.5 A, resistive load
(deadtime included)
Output rise time(2)
ILOAD = 2.5 A, resistive load
Enable pin to out, turn OFF delay
time(2)
ILOAD = 2.5 A, resistive load
Min. Typ. Max. Unit
6.6 7 7.4 V
5.6 6 6.4 V
5 10 mA
165
°C
0.34 0.4
0.53 0.59
0.28 0.34
0.47 0.53
2 mA
-0.15
mA
1.15 1.3 V
300
ns
200
ns
-0.3
0.8 V
2
7
V
-10
µA
10 µA
1.8 2
V
0.8 1.3
V
0.25 0.5
V
100 250 400 ns
1.6
µs
40
250 ns
300 550 800 ns
6/27
DocID022028 Rev 3
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