K9F2G08Q0M 데이터 시트보기 (PDF) - Samsung

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K9F2G08Q0M

256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

Samsung 

K9F2G08Q0M K9F2G16Q0M

K9F2G08U0M K9F2G16U0M

Serial Access Cycle after Read(CLE=L, WE=H, ALE=L)

CE

RE

I/Ox

R/B

tCEA

tREA

tRP

tREH tREA

tRHZ*

Dout

tRR

tRC

Dout

Preliminary

FLASH MEMORY

tREA

tCHZ*

tOH

tRHZ*

tOH

Dout

NOTES : Transition is measured ±200mV from steady state voltage with load.

This parameter is sampled and not 100% tested.

Serial Access Cycle after Read(CLE=L, WE=H, ALE=L)

CE

RE

I/Ox

R/B

tCEA

tREA

tRP

tREH tREA

tRHZ*

Dout

tRR

tRC

Dout

tREA

tCHZ*

tOH

tRHZ*

tOH

Dout

NOTES : Transition is measured ±200mV from steady state voltage with load.

This parameter is sampled and not 100% tested.

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