K4S560432B-TC/L75 데이터 시트보기 (PDF) - Samsung

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K4S560432B-TC/L75

256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL

Samsung 

K4S560432B

DC CHARACTERISTICS

(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)

Parameter

Symbol

Test Condition

Operating current

(One bank active)

Precharge standby current in

power-down mode

Precharge standby current in

non power-down mode

Active standby current in

power-down mode

Active standby current in

non power-down mode

(One bank active)

Operating current

(Burst mode)

Refresh current

Self refresh current

Burst length = 1

ICC1 tRC ≥ tRC(min)

IO = 0 mA

ICC2P

ICC2PS

ICC2N

CKE ≤ VIL(max), tCC = 10ns

CKE & CLK ≤ VIL(max), tCC = ∞

CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

ICC2NS CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

ICC3P

ICC3PS

ICC3N

CKE ≤ VIL(max), tCC = 10ns

CKE & CLK ≤ VIL(max), tCC = ∞

CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

ICC3NS

CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

IO = 0 mA

ICC4 Page burst

4banks Activated

tCCD = 2CLKs

ICC5 tRC ≥ tRC(min)

ICC6 CKE ≤ 0.2V

C

L

Notes : 1. Measured with outputs open.

2. Refresh period is 64ms.

3. K4S560432B-TC**

4. K4S560432B-TL**

5. Unless otherwise noticed, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ).

CMOS SDRAM

Version

-75 -1H -1L

Unit

Note

120 110 110 mA

1

2

mA

2

16

mA

14

6

mA

6

30

mA

25

mA

140 115 115 mA

1

220 210 210 mA

2

3

mA

3

2

mA

4

Rev. 0.2 May.2000

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