IRFM210A 데이터 시트보기 (PDF) - Fairchild Semiconductor
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IRFM210A Datasheet PDF : 7 Pages
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IRFM210A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (TA=25oC unless otherwise specified)
Symbol
BVDSS
∆BV / ∆TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
200 -- -- V
-- 0.23 -- V/oC
2.0 -- 4.0 V
-- -- 100 nA
-- -- -100
-- -- 10
-- -- 100 µA
VGS=0V,ID=250 µA
ID=250µA See Fig 7
VDS=5V,ID=250 µA
VGS=30V
VGS=-30V
VDS=200V
VDS=160V,TA=125 oC
Static Drain-Source
On-State Resistance
-- -- 1.5 Ω VGS=10V,ID=0.39A
O4
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- 0.66 -- Ω VDS=40V,ID=0.39A
O4
-- 160 210
--
35
44
VGS=0V,VDS=25V,f =1MHz
pF
See Fig 5
-- 14 18
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 10 30
-- 10 30
VDD=100V,ID=3.3A,
-- 20 50 ns RG=24Ω
-- 12 35
See Fig 13
O4 O5
Total Gate Charge
Gate-Source Charge
Gate-Drain( “ Miller “ ) Charge
-- 7 10
VDS=160V,VGS=10V,
-- 1.5
-- 3.5
--
--
nC
ID=3.3A
See Fig 6 & Fig 12
O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- 0.77
Integral reverse pn-diode
A
-- 6
in the MOSFET
O4 -- -- 1.5 V TJ=25oC,IS=0.77A,VGS=0V
-- 107 -- ns TJ=25oC,IF=3.3A
-- 0.33 -- µC diF/dt=100A/µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=100mH, IAS=0.77A, VDD=50V, RG=27Ω, Starting TJ =25 oC
O3 ISD <_3.3A, di/dt <_ 140A/ µs, VDD <_BVDSS , Starting TJ =25 oC
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_2%
O5 Essentially Independent of Operating Temperature
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