IRFM210A 데이터 시트보기 (PDF) - Fairchild Semiconductor

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IRFM210A

Advanced Power MOSFET

Fairchild Semiconductor 

Advanced Power MOSFET

FEATURES

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

Improved Gate Charge

Extended Safe Operating Area

Lower Leakage Current : 10 µA (Max.) @ VDS = 200V

Low RDS(ON) : 1.169 Ω(Typ.)

Absolute Maximum Ratings

Symbol

VDSS

ID

IDM

VGS

EAS

IAR

EAR

dv/dt

PD

TJ , TSTG

TL

Characteristic

Drain-to-Source Voltage

Continuous Drain Current (TA=25oC )

Continuous Drain Current (TA=70oC )

Drain Current-Pulsed

O1

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

O2

Avalanche Current

O1

Repetitive Avalanche Energy

O1

Peak Diode Recovery dv/dt

O3

Total Power Dissipation (TA=25oC )*

Linear Derating Factor *

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8 “ from case for 5-seconds

IRFM210A

BVDSS = 200 V

RDS(on) = 1.5 Ω

ID = 0.77 A

SOT-223

2

1

3

1. Gate 2. Drain 3. Source

Value

200

0.77

0.61

6

+_ 30

40

0.77

0.2

5.0

2

0.016

- 55 to +150

300

Units

V

A

A

V

mJ

A

mJ

V/ns

W

W/oC

oC

Thermal Resistance

Symbol

RθJA

Characteristic

Junction-to-Ambient *

Typ.

--

* When mounted on the minimum pad size recommended (PCB Mount).

Max.

61

Units

oC/W

Rev. B

©1999 Fairchild Semiconductor Corporation

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