IRFH4253DPBF 데이터 시트보기 (PDF) - International Rectifier
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IRFH4253DPBF Datasheet PDF : 12 Pages
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100000
10000
Q1 - Control FET
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1000
100
Ciss
Coss
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
14.0
ID= 30A
12.0
10.0
VDS= 20V
VDS= 13V
8.0
6.0
4.0
2.0
0.0
0
5
10 15 20 25 30
QG, Total Gate Charge (nC)
Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10 Limited by package
100µsec
1
1msec
0.1 Tc = 25°C
Tj = 150°C
Single Pulse
0.01
0.1
1
10msec
DC
10
100
VDS, Drain-to-Source Voltage (V)
Fig 11. Maximum Safe Operating Area
5 www.irf.com © 2013 International Rectifier
100000
10000
1000
IRFH4253DPbF
Q2 - Synchronous FET
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance vs. Drain-to-Source Voltage
14.0
ID= 30A
12.0
VDS= 20V
10.0
VDS= 13V
8.0
6.0
4.0
2.0
0.0
0
10 20 30 40 50 60 70 80
QG, Total Gate Charge (nC)
Fig 10. Typical Gate Charge vs. Gate-to-Source Voltage
10000
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
10 Limited by package
1
1msec
10msec
0.1 Tc = 25°C
Tj = 150°C
Single Pulse
0.01
0.1
1
DC
10
100
VDS, Drain-to-Source Voltage (V)
Fig 12. Maximum Safe Operating Area
June 10, 2013
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