IRFH4253DPBF 데이터 시트보기 (PDF) - International Rectifier
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IRFH4253DPBF Datasheet PDF : 12 Pages
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VDSS
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
ID
(@TC = 25°C)
Q1
25
4.60
10
45
Q2
25
1.45
31
45
V
m
nC
A
Applications
Control and Synchronous MOSFETs for synchronous buck
converters
IRFH4253DPbF
HEXFET® Power MOSFET
Features
Control and synchronous MOSFETs in one package
Low charge control MOSFET (10nC typical)
Low RDSON synchronous MOSFET (<1.45m)
Intrinsic Schottky Diode with Low Forward Voltage on Q2
RoHS Compliant, Halogen-Free
MSL2, Industrial Qualification
DUAL PQFN 5X6 mm
Benefits
Increased power density
Lower switching losses
results in Lower conduction losses
Lower Switching Losses
Environmentally friendlier
Increased reliability
Base part number
IRFH4253DPbF
Package Type
Dual PQFN 5mm x 6mm
Standard Pack
Form
Tape and Reel
Quantity
4000
Orderable Part Number
IRFH4253DTRPbF
Absolute Maximum Ratings
VGS
ID @ TC = 25°C
ID @ TC = 70°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TC = 70°C
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Q1 Max. Q2 Max.
± 20
64 145
51 116
45
120
31
20
0.25
45
580
50
32
0.40
-55 to + 150
Units
V
A
W
W/°C
°C
Thermal Resistance
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Notes through are on page 12
Q1 Max.
4.0
20
34
24
Q2 Max.
2.5
13
38
24
Units
°C/W
1 www.irf.com © 2013 International Rectifier
June 10, 2013
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