IRF320 데이터 시트보기 (PDF) - Intersil
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IRF320 Datasheet PDF : 7 Pages
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IRF320, IRF321, IRF322, IRF323
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
CISS VDS = 25V, VGS = 0V, f = 1MHz
-
(Figure 11)
COSS
-
CRSS
-
LD
Measured Between the Modified MOSFET
-
Contact Screw on the Symbol Showing the
Flange that is Closer to Internal Devices
Source and Gate Pins Inductances
and the Center of Die
D
LS
Measured from the
LD
-
Source Lead, 6mm
G
(0.25in) From the
Flange and the Source
LS
Bonding Pad
S
RθJC
-
RθJA Free Air Operation
-
450
-
pF
100
-
pF
20
-
pF
5.0
-
nH
12.5
-
nH
-
2.5 oC/W
-
30 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to Drain Current
ISD Modified MOSFET
Symbol Showing the
D
Pulse Source to Drain Current
ISDM Integral Reverse P-N
(Note 3)
Junction Diode
G
MIN TYP MAX UNITS
-
-
3.3
A
-
-
13
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
TC = 25oC, ISD = 3.3A, VGS = 0V, (Figure 13)
-
-
1.8
V
trr
TJ = 25oC, ISD = 3.3A, dISD/dt = 100A/µs
120 270 600 ns
QRR TJ = 25oC, ISD = 3.3A, dISD/dt = 100A/µs
0.64 1.4 3.0 µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 31mH, RG = 25Ω, peak IAS = 3.3A. See Figures 15, 16.
5-3
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