IPB09N03LAG 데이터 시트보기 (PDF) - Infineon Technologies

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IPB09N03LAG

Power-Transistor

Infineon Technologies 

Parameter

Symbol Conditions

Thermal characteristics

Thermal resistance, junction - case

SMD version, device on PCB

R thJC

R thJA

minimal footprint

6 cm2 cooling area5)

IPB09N03LA G

min.

Values

typ.

Unit

max.

-

-

2.4 K/W

-

-

62

-

-

40

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

Transconductance

V (BR)DSS V GS=0 V, I D=1 mA

25

V GS(th) V DS=V GS, I D=20 µA

1.2

I DSS

V DS=25 V, V GS=0 V,

T j=25 °C

-

V DS=25 V, V GS=0 V,

T j=125 °C

-

I GSS

V GS=20 V, V DS=0 V

-

R DS(on)

V GS=4.5 V, I D=30 A,

SMD version

-

V GS=10 V, I D=30 A,

-

SMD version

RG

-

g fs

|V DS|>2|I D|R DS(on)max,

I D=30 A

22

2) Current is limited by bondwire; with an

R thJC=2.4 K/W the chip is able to carry 64

3) See figure 3

4) T j,max=150 °C and duty cycle D <0.25 for

V

5)

GS<-5 V

Device on

40

mm

x

40

mm

x

1.5

mm

epoxy PCB FR4 with 6 cm2 (one layer, 70

-

-V

1.6

2

0.1

1 µA

10

100

10

100 nA

12.1 15.1 mΩ

7.4

8.9

1

-Ω

45

-S

Rev. 1.6

page 2

2006-05-11

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