IPB09N03LAG 데이터 시트보기 (PDF) - Infineon Technologies

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IPB09N03LAG

Power-Transistor

Infineon Technologies 

OptiMOS®2 Power-Transistor

Features

• Ideal for high-frequency dc/dc converters

• Qualified according to JEDEC1) for target applications

• N-channel - Logic level

• Excellent gate charge x R DS(on) product (FOM)

• Very low on-resistance R DS(on)

• Superior thermal resistance

• 175 °C operating temperature

• dv /dt rated

• Pb-free lead plating; RoHS compliant

IPB09N03LA G

Product Summary

V DS

R DS(on),max (SMD version)

ID

25 V

8.9 mΩ

50 A

PG-TO263-3-2

Type

IPB09N03LA G

Package

PG-TO263-3-2

Marking

09N03LA

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current

ID

T C=25 °C2)

Pulsed drain current

I D,pulse

T C=100 °C

T C=25 °C3)

Avalanche energy, single pulse

E AS

I D=45 A, R GS=25 Ω

Reverse diode dv /dt

dv /dt

I D=50 A, V DS=20 V,

di /dt =200 A/µs,

T j,max=175 °C

Gate source voltage4)

V GS

Power dissipation

P tot

T C=25 °C

Operating and storage temperature T j, T stg

IEC climatic category; DIN IEC 68-1

1) J-STD20 and JESD22

Rev. 1.6

page 1

Value

50

46

350

75

6

±20

63

-55 ... 175

55/175/56

Unit

A

mJ

kV/µs

V

W

°C

2006-05-11

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