IKW25T120 데이터 시트보기 (PDF) - Infineon Technologies

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IKW25T120

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

IKW25T120

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TrenchStop Series

15V

240V

960V

10V

5V

0V 0nC

50nC 100nC 150nC

QGE, GATE CHARGE

Figure 17. Typical gate charge

(IC=25 A)

200nC

Ciss

1nF

100pF

Coss

Crss

10pF

0V

10V

20V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 18. Typical capacitance as a function

of collector-emitter voltage

(VGE=0V, f = 1 MHz)

15µs

10µs

5µs

0µs

12V

14V

16V

VGE, GATE-EMITTETR VOLTAGE

Figure 19. Short circuit withstand time as a

function of gate-emitter voltage

(VCE=600V, start at TJ=25°C)

200A

150A

100A

50A

0A

12V

14V

16V

18V

VGE, GATE-EMITTETR VOLTAGE

Figure 20. Typical short circuit collector

current as a function of gate-

emitter voltage

(VCE ≤ 600V, Tj ≤ 150°C)

Power Semiconductors

9

Preliminary / Rev. 1 Jul-02

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