IKW25T120 데이터 시트보기 (PDF) - Infineon Technologies
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IKW25T120
Infineon Technologies
IKW25T120 Datasheet PDF : 15 Pages
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IKW25T120
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TrenchStop Series
Dynamic Characteristic
Input capacitance
Ciss
VCE=25V,
-
Output capacitance
Coss
VGE=0V,
-
Reverse transfer capacitance
Crss
f=1MHz
-
Gate charge
QGate
VCC=960V, IC=25A
-
VGE=15V
Internal emitter inductance
LE
TO-247AC
-
measured 5mm (0.197 in.) from case
Short circuit collector current1)
IC(SC)
VGE=15V,tSC≤10µs
-
VCC = 600V,
Tj = 25°C
1860
96
82
155
-
150
- pF
-
-
- nC
13 nH
-A
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=25°C,
VCC=600V,IC=25A
VGE=-15/15V,
RG=22Ω,
Lσ2)=180nH,
Cσ2)=39pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25°C,
VR=600V, IF=25A,
diF/dt=800A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
50
30
560
70
2.0
2.2
4.2
200
2.3
21
390
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
µC
A
- A/µs
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2) Leakage inductance L σ an d Stray capacity Cσ due to dynamic test circuit in Figure E.
Power Semiconductors
3
Preliminary / Rev. 1 Jul-02
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