IKA03N120H2 데이터 시트보기 (PDF) - Infineon Technologies

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IKA03N120H2

HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

IKA03N120H2

1nF

C iss

100pF

C oss

10pF

C rss

0V

10V

20V

30V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical capacitance as a

function of collector-emitter voltage

(VGE = 0V, f = 1MHz)

101K/W

D=0.5 0.1 0.2

100K/W

10-1K/W

R,(K/W)

1,4285

1,8838

0.05 0,4057

0,4234

0.02

0,3241

0.01

0,1021

0,1340

τ, (s)

5,2404

1,7688

0,07592

0,005018

0,000595

0,000126

0,000018

R1

R2

10-2K/W

single pulse

C1=τ1/R1 C2=τ2/R2

1µs 10µs 100µs 1ms 10ms100ms 1s 10s

tP, PULSE WIDTH

Figure 19. Typical IGBT transient thermal

impedance as a function of pulse width

(D=tP/T)

20V

15V

U =240V

CE

10V

U =960V

CE

5V

0V

0nC

10nC

20nC

QGE, GATE CHARGE

Figure 18. Typical gate charge

(IC = 3A)

30nC

D=0.5

0.2

100K/W

0.1

1 0 -1K /W

0.05

0.02

0.01

single pulse

R,(K/W)

0.9734

1.452

0.6213

0.7174

0.7037

0.1445

R1

τ, (s)

4.279

1.094

4.899*10-2

3.081*10-3

4.341*10-4

0.833*10-5

R2

C1=τ1/R1 C2=τ2/R2

1 0 -2K /W

10µs 100µs 1ms 10ms100ms 1s 10s

tP, PULSE WIDTH

Figure 22. Typical Diode transient

thermal impedance as a function of

pulse width

(D=tP/T)

Power Semiconductors

9

Mar-04, Rev. 2

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