IKA03N120H2 데이터 시트보기 (PDF) - Infineon Technologies

부품명

상세내역

일치하는 목록

IKA03N120H2

HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

IKA03N120H2

1.0mJ

1) Eon and Ets include losses

due to diode recovery.

E1

ts

E

off

0.5mJ

E1

on

0.0mJ

0A

2A

4A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, Tj = 150°C,

VCE = 800V, VGE = +15V/0V, RG = 82Ω,

dynamic test circuit in Fig.E )

0.7mJ

1) Eon and Ets include losses

due to diode recovery.

E1

ts

0.6mJ

0.5mJ

0.4mJ

0.3mJ E

off

0.2mJ

E1

on

0Ω 50Ω 100Ω 150Ω 200Ω 250Ω

RG, GATE RESISTOR

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, Tj = 150°C,

VCE = 800V, VGE = +15V/0V, IC = 3A,

dynamic test circuit in Fig.E )

0.5mJ

1) Eon and Ets include losses

E1

due to diode recovery.

ts

0.4mJ

0.3mJ

0.2mJ

E

off

E1

on

0.1mJ

25°C

80°C

125°C 150°C

Tj, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction temperature

(inductive load, VCE = 800V,

VGE = +15V/0V, IC = 3A, RG = 82Ω,

dynamic test circuit in Fig.E )

0.16mJ

I =3A, T =150°C

C

J

0.12mJ

0.08mJ

I =1A, T =150°C

C

J

I =3A, T =25°C

C

J

0.04mJ

0.00mJ

0V/us

I =1A, T =25°C

C

J

1000V/us 2000V/us 3000V/us

dv/dt, VOLTAGE SLOPE

Figure 16. Typical turn off switching energy

loss for soft switching

(dynamic test circuit in Fig. E)

Power Semiconductors

8

Mar-04, Rev. 2

Share Link: