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IC62LV25616L

256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

Integrated Circuit Solution Inc 

IC62LV25616L

IC62LV25616LL

Document Title

256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM

Revision History

Revision No

0A

History

Initial Draft

Draft Date

May 1,2001

Remark

Preliminary

0B

1. Change for tPWE: 45 to 40 ns for 55 ns product

August 21,2001

: 60 to 40 ns for 70 ns product

2. Change for VCC: 2.2-3.6V to 2.7-3.6V

3.1 Change for ICC test conditiomn: VCC=Max. to 3V

3.2 Change for ICC: 35 to 40mA for 55 ns commercial product

30 to 35mA for 70 ns commercial porduct

25 to 30 mA for 100 ns commercial product

4. Change for ISB1 test conditions: with CE controlled only

5.1 Change for VDR Min. : 1.2 to 1.5V

5.2 Change for IDR test condition: VCC=1.2 to 1.5V

0C

1.Change for ICC: 40 mA to 25 mA for 55 ns

January 29,2002

35 mA to 20 mA for 70 ns

30 mA to 15mA for 100 ns

2.Change for IDR: 4µA to 5 µA for commercial/LL product

6µA to 9 µA for Industrial/LL Product

0D

Change for VOH: 2.0V to 2.4V

October 9,2002

The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and

products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices.

Integrated Circuit Solution Inc.

1

LPSR013-0D 10/11/2002

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