HM514170C 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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HM514170C

262,144-word × 16-bit Dynamic Random Access Memory

Hitachi -> Renesas Electronics 

HM514170C Series

HM51S4170C Series

262,144-word × 16-bit Dynamic Random Access Memory

Rev. 1.0

Jul. 21, 1995

Description

The Hitachi HM51(S)4170C are CMOS dynamic RAM organized as 262,144-word × 16-bit.

HM51(S)4170C have realized higher density, higher performance and various functions by employing 0.8

µm CMOS process technology and some new CMOS circuit design technologies. The HM51(S)4170C

offer fast page mode as a high speed access mode. Multiplexed address input permits the

HM51(S)4170C to be packaged in standard 400-mil 40-pin plastic SOJ and standard 400-mil 44-pin

plastic TSOPII. Internal refresh timer enables HM51S4170C self refresh operation.

Features

• Single 5 V (±10%)

• High speed

— Access time: 70 ns/80 ns (max)

• Low power dissipation

— Active mode: 660 mW/578 mW (max)

— Standby mode: 11 mW (max)

1.1 mW (max) (L-version)

• Fast page mode capability

• 1024 refresh cycles: 16 ms

128 ms (L-version)

• 2 WE-byte control

• 2 variations of refresh

— RAS-only refresh

— CAS-before-RAS refresh

• Battery backup operation (L-version)

• Self refresh operation (HM51S4170C)

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