H25295 데이터 시트보기 (PDF) - Intersil

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H25295

20MHz, High Input Impedance, High Slew Rate Operational Amplifier

Intersil 

Die Characteristics

DIE DIMENSIONS:

67 mils x 57 mils x 19 mils

1700µm x 1440µm x 483µm

METALLIZATION:

Type: Al, 1% Cu

Thickness: 16kÅ ±2kÅ

SUBSTRATE POTENTIAL

Unbiased

Metallization Mask Layout

COMP

HA-2529

PASSIVATION:

Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)

Silox Thickness: 12kÅ ±2kÅ

Nitride Thickness: 3.5kÅ ±1.5kÅ

TRANSISTOR COUNT:

40

PROCESS:

Bipolar Dielectric Isolation

HA-2529

V+

OUT

BAL

BAL

-IN

+IN

V-

8

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