800
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
600
Cies
400
200
0
1
Coes
Cres
10
100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
CPV362M4K
16 VCC = 400V
I C = 3A
12
8
4
0
0
10
20
30
40
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
1.0
VCC = 480V
VGE = 15V
TJ = 25 ° C
0.8 IC = 6.0A
0.6
0.4
0.2
0.0
0
10
20
30
40
50
RGRG,,GGaattee RReessiissttaannccee( (ΩOh) m)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
1 RG =155011ΩΩOhm
VGE = 15V
VCC = 480V
0.1
IC = 6 A
IC = 3 A
IC = 1.5 A
0.01
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature °( C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature