CPV362M4K 데이터 시트보기 (PDF) - International Rectifier
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CPV362M4K Datasheet PDF : 10 Pages
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CPV362M4K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temp. Coeff. of Breakdown Voltage
––– 0.49 ––– V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage ––– 1.70 1.93
IC = 3.0A
VGE = 15V
––– 1.98 ––– V IC = 5.7A
See Fig. 2, 5
––– 1.65 –––
IC = 3.0A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0 ––– 6.0
VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temp. Coeff. of Threshold Voltage
––– -13 ––– mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
2.0 3.0 ––– S VCE = 100V, IC = 12A
ICES
Zero Gate Voltage Collector Current ––– ––– 250 µA VGE = 0V, VCE = 600V
––– ––– 1700
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
Diode Forward Voltage Drop
––– 1.4 1.7 V IC = 8A
See Fig. 13
––– 1.3 1.6
IC = 8A, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
––– ––– ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
––– 38 57
––– 5.2 8 nC
––– 18 27
––– 23 –––
––– 54 ––– ns
––– 125 188
––– 120 180
––– 0.14 –––
––– 0.07 ––– mJ
––– 0.21 0.26
10 ––– ––– µs
––– 25 –––
––– 51 –––
––– 308 –––
––– 166 –––
––– 0.33 –––
––– 450 –––
––– 61 –––
––– 14 –––
––– 37 55
––– 55 90
––– 3.5 5.0
––– 4.5 8.0
––– 65 138
––– 124 360
––– 240 –––
––– 210 –––
ns
mJ
pF
ns
A
nC
A/µs
Conditions
IC = 3.0A
VCC = 400V
See Fig. 8
TJ = 25°C
IC = 3.0A, VCC = 480V
VGE = 15V, RG = 51Ω
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 18
VCC = 360V, TJ = 125°C
VGE = 15V, RG = 51Ω, VCPK < 500V
TJ = 150°C, See Fig. 10, 11, 18
IC =3.0A, VCC = 480V
VGE = 15V, RG = 51Ω
Energy losses include "tail" and
diode reverse recovery.
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
TJ = 25°C See Fig.
TJ = 125°C
14
IF = 8A
TJ = 25°C See Fig.
TJ = 125°C
15
VR = 200V
TJ = 25°C See Fig.
TJ = 125°C
16 di/dt=200A/µs
TJ = 25°C See Fig.
TJ = 125°C
17
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