CM1200HA-50H 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC
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CM1200HA-50H Datasheet PDF : 4 Pages
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PRELIMINARY NSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HA-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
5
3
2
td(off)
100
td(on)
7
5
tr
3
tf
2
10–1
7
5 5 7 102
VCC = 1250V, VGE = ±15V
RG = 2.5Ω, Tj = 125°C
Inductive load
2 3 5 7 103 2 3 5
COLLECTOR CURRENT IC (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
101
7 Single Pulse
5 TC = 25°C
3 Rth(j – c) = 0.012K/ W
2
100
7
5
3
2
10–1
7
5
3
2
10–2
10–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100
TIME (s)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
5
5
VCC = 1250V, Tj = 125°C
3 Inductive load
3
2 VGE = ±15V, RG = 2.5Ω
2
100
trr
103
7
Irr
7
5
5
3
3
2
2
10–1
7
5 5 7 102
23
5 7 103
23
EMITTER CURRENT IE (A)
102
7
55
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
101
7 Single Pulse
5 TC = 25°C
3 Rth(j – c) = 0.024K/ W
2
100
7
5
3
2
10–1
7
5
3
2
10–2
10–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100
TIME (s)
VGE – GATE CHARGE
(TYPICAL)
20
VCC = 1250V
IC = 1200A
16
12
8
4
0
0 2000 4000 6000 8000 10000
GATE CHARGE QG (nC)
Mar. 2001
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