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CM1200HA-50H

MITSUBISHI HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI ELECTRIC  

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HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MITSUBISHI HVIGBT MODULES

CM1200HA-50H

HIGH POWER SWITCHING USE

INSULATED TYPE

MAXIMUM RATINGS (Tj = 25°C)

Symbol

Item

Conditions

Ratings

Unit

VCES

VGES

IC

ICM

Collector-emitter voltage

Gate-emitter voltage

Collector current

VGE = 0V

VCE = 0V

TC = 25°C

Pulse

2500

V

±20

V

1200

A

(Note 1)

2400

A

IE (Note 2)

IEM (Note 2)

PC (Note 3)

Emitter current

Maximum collector dissipation

TC = 25°C

Pulse

TC = 25°C, IGBT part

1200

A

(Note 1)

2400

A

10400

W

Tj

Junction temperature

—

–40 ~ +150

°C

Tstg

Storage temperature

—

–40 ~ +125

°C

Viso

Isolation voltage

Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.

6000

V

Main terminals screw M8

6.67 ~ 13.00

N·m

—

Mounting torque

Mounting screw M6

2.84 ~ 6.00

N·m

Auxiliary terminals screw M4

0.88 ~ 2.00

N·m

—

Mass

Typical value

2.2

kg

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Symbol

Item

Conditions

Min

ICES

Collector cutoff current

VCE = VCES, VGE = 0V

—

Gate-emitter

VGE(th)

threshold voltage

IC = 120mA, VCE = 10V

4.5

IGES

VCE(sat)

Cies

Coes

Cres

Gate-leakage current

Collector-emitter

saturation voltage

Input capacitance

Output capacitance

Reverse transfer capacitance

VGE = VGES, VCE = 0V

Tj = 25°C

Tj = 125°C

IC = 1200A, VGE = 15V

VCE = 10V

VGE = 0V

—

—

(Note 4)

—

—

—

—

QG

Total gate charge

VCC = 1250V, IC = 1200A, VGE = 15V

—

td (on)

Turn-on delay time

VCC = 1250V, IC = 1200A

—

tr

Turn-on rise time

VGE1 = VGE2 = 15V

—

td (off)

Turn-off delay time

RG = 2.5Ω

—

tf

Turn-off fall time

Resistive load switching operation

—

VEC (Note 2) Emitter-collector voltage

IE = 1200A, VGE = 0V

—

trr (Note 2) Reverse recovery time

IE = 1200A

—

Qrr (Note 2) Reverse recovery charge

die / dt = –2400A / µs

—

Rth(j-c)Q

Junction to case, IGBT part

—

Rth(j-c)R Thermal resistance

Junction to case, FWDi part

—

Rth(c-f) Contact thermal resistance Case to fin, conductive grease applied

—

Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.

2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.

3. Junction temperature (Tj) should not increase beyond 150°C.

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

Limits

Typ

—

Unit

Max

15 mA

6.0

7.5 V

—

0.5 µA

3.20 4.16

3.60

—

V

120

—

nF

13.2

—

nF

4.0

—

nF

5.4

—

µC

—

1.60 µs

—

2.00 µs

—

2.50 µs

—

1.00 µs

2.90 3.77 V

—

1.20 µs

250

—

µC

—

0.012 K/W

—

0.024 K/W

0.006

—

K/W

HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)

Mar. 2001

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