C1227 데이터 시트보기 (PDF) - IMP, Inc
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C1227 Datasheet PDF : 2 Pages
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Process C1227
Physical Characteristics
Diffusion & Thin Films
Symbol
Starting Material p<100>
Well(field)Sheet Resistance
N+ Sheet Resistance
ρN-well(f)
ρN+
N+ Junction Depth
xjN+
P+ Sheet Resistance
ρP+
P+ Junction Depth
xjP+
Base Resistance
RSHB_RB
High-Voltage Gate Oxide
HTGOX
Gate Oxide Thickness
TGOX
Interpoly Oxide Thickness
IPOX
Gate Poly Sheet Resistance ρPOLY1
Poly2 Resistivity
Metal-1 Sheet Resistance
Metal-2 Sheet Resistance
RSH_PL P
ρM1
ρM2
Passivation Thickness
TPASS
Minimum
1.5
20.0
50.0
1.33
33.6
15.0
1.5
35.0
19.0
Typical
2.1
35.0
0.4
75.0
0.4
1.66
22
22
42
22.0
2
45.0
25.0
200+900
Layout Rules
Maximum Unit Comments
2.7
50.0
100.0
2.00
50.4
30.0
2.5
65.0
35.0
KΩ/
Ω/
µm
Ω/
µm
KΩ/sq
nm
nm
nm
Ω/
kΩ/
mΩ/
mΩ/
nm
n-well
oxide+nitride
Min Channel Width
Min Spacing, Active Region, 5V
Poly1 Width/Space
Poly2 Width/Space
Contact Width/Space
Via Width/Space
Metal-1 Width/Space
Metal-2 Width/Space
Gate Poly Width/Space
N+/P+ Width/Space
4.0µm
2.0µm
1.4/2.0µm
3.0/2.0µm
1.4x1.4µm
1.4/1.6µm
2.6/1.6µm
2.6/1.6µm
1.5/2.0µm
2.5/2.0µm
Diffusion Overlap of Contact
Poly Overlap of Contact
Metal-1 Overlap of Contact
Contact to Poly Space
Minimum Pad Opening
Metal-1 Overlap of Via
Metal-2 Overlap of Via
Minimum Pad Opening
Minimum Pad to Pad Spacing
Minimum Pad Pitch
1.0µm
1.0µm
1.5µm
1.5µm
65x65µm
1.0µm
1.0µm
65x65µm
5.0µm
80µm
72
C1227-4-98
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