C1227 데이터 시트보기 (PDF) - IMP, Inc
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C1227 Datasheet PDF : 2 Pages
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®
ISO 9001 Registered
Process C1227
HV BiCMOS 1.2µm
30V Double Metal - Double Poly
Electrical Characteristics
Symbol
N-Channel High Voltage Transistor
Threshold Voltage
HVTN
Punch Through Voltage
HVBVDSSP
ON Resistance
HVPR0N
Minimum
0.7
36
Operating Voltage
N-Channel Low Voltage Transistor
Threshold Voltage
VTN
0.4
Body Factor
γN
0.50
Conduction Factor
βN
64.0
Effective Channel Length
LeffN
1.20
Width Encroachment
∆WN
Punch Through Voltage
BVDSSN
8
Poly Field Threshold Voltage VTFPN
10
Typical
0.9
1.4
VGS = 5V
VDS = 30V
0.6
0.65
75.0
1.35
0.45
18
T=25oC Unless otherwise noted
Maximum Unit Comments
1.1
V
V
mΩ- @VGS = 5V
cm2 VDS = 0.1V
V
0.8
0.80
86.0
1.50
V
V1/2
µA/V2
µm
µm
V
V
100x1.4µm
100x1.4µm
100x100µm
100x1.4µm
Per side
Symbol
P-Channel High Voltage Transistor
Threshold Voltage
HVTP
Punch Through Voltage
HVBVDSSP
ON Resistance
HVPR0N
Minimum
– 0.7
– 36
P-Channel Low Voltage Transistor
Threshold Voltage
VTP
Body Factor
γP
Conduction Factor
βP
Effective Channel Length
LeffP
Width Encroachment
∆WP
Punch Through Voltage
BVDSSP
Poly Field Threshold Voltage VTFP(P)
– 0.8
0.35
20.0
1.35
–8
–10
Typical
– 0.9
11.0
– 0.6
0.50
25.0
1.50
0.40
–18
Maximum Unit Comments
–1.1
V
V
mΩ-
cm2
@VGS = –5V
@VDS = –0.1V
– 0.4
0.65
30.0
1.65
V
V1/2
µA/V2
µm
µm
V
V
100x1.4µm
100x1.4µm
100x100µm
100x1.4µm
Per side
Capacitance
Gate Oxide
Metal-1 to Poly1
Metal-2 to Metal-1
Symbol
COX
CM1P
CMM
Minimum
1.338
0.040
0.043
Typical
1.439
0.046
0.050
Maximum
1.569
0.052
0.057
Unit
fF/µm2
fF/µm2
fF/µm2
Comments
Vertical NPN Transistor
Beta
Early Voltage
Cut-Off Frequency
Symbol
hFE
VA
fτ
Minimum
50
Typical
140
34
1.89
Maximum
240
Unit
V
GHz
Comments
4.5x4.5µm
© IMP, Inc.
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