C1210 데이터 시트보기 (PDF) - IMP, Inc

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C1210

Process C1210 CMOS 1.2μm Zero Threshold Devices

IMP, Inc 

®

ISO 9001 Registered

Process C1210

CMOS 1.2µm

Zero Threshold Devices

N-Channel Transistor

Threshold Voltage

Body Factor

Conduction Factor

Effective Channel Length

Width Encroachment

Punch Through Voltage

Poly Field Threshold Voltage

Electrical Characteristics

Symbol

VTN

γN

βN

LeffN

∆WN

BVDSSN

VTFP(N)

Minimum

0.55

64

0.8

9

10

Typical

0.75

0.34

75

1.0

0.6

T=25oC Unless otherwise noted

Maximum

0.95

86

1.2

Unit

V

V1/2

µA/V2

µm

µm

V

V

Comments

100x1.2µm

100x1.2µm

100x100µm

100x1.2µm

Per side

Zero Vt N-Channel Transis.

Threshold Voltage

Body Factor

Conduction Factor

Saturation Current

Symbol

VTZLN

γZLN

βZLN

IDSATZN

Minimum

0.00

75

28

Typical

0.15

0.348

90

34

Maximum

0.30

105

40

Unit

V

V1/2

µA/V2

mA

Comments

100x100µm

100x100µm

100x100µm

100x1.5µm

P-Channel Transistor

Threshold Voltage

Body Factor

Conduction Factor

Effective Channel Length

Width Encroachment

Punch Through Voltage

Poly Field Threshold Voltage

Symbol

VTP

γP

βP

LeffP

∆WP

BVDSSP

VTFP(P)

Minimum

–0.7

21

0.9

–9.0

–10.0

Typical

–0.9

0.38

25

1.1

0.8

Maximum

–1.1

29

1.3

Unit

V

V1/2

µA/V2

µm

µm

V

V

Comments

100x1.2µm

100x1.2µm

100x100µm

100x1.2µm

Per side

Zero Vt P-Channel Transis.

Threshold Voltage

Body Factor

Conduction Factor

Saturation Current

Symbol

VTZLP

γZLP

βZLP

IDSATZP

Minimum

–0.3

21

–11

Typical

–0.1

0.36

26

–15

Maximum

0.1

31

–19

Unit

V

V1/2

µA/V2

mA

Comments

100x100µm

100x100µm

100x100µm

100x1.5µm

© IMP, Inc.

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