BYT01-400 데이터 시트보기 (PDF) - STMicroelectronics

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BYT01-400

HIGH EFFICIENCY ULTRAFAST DIODE

STMicroelectronics 

BYT01-400

THERMAL PARAMETERS

Symbol

Rth(j-a) Junction to ambient*

* On infinite heatsink with 10mm lead length.

Parameter

Value

45

Unit

°C/W

STATIC ELECTRICAL CHARACTERISTICS

Symbol

Parameters

Test Conditions

IR*

Reverse leakage current

Tj = 25°C VR = VRRM

VF** Forward voltage drop

Tj = 100°C

Tj = 25°C IF = 1A

Tj = 100°C

Min. Typ. Max. Unit

20 µA

0.1 0.5 mA

1.5

V

1.0 1.4

Pulse test: * tp = 5ms, δ < 2%

** tp = 380µs, δ < 2%

To evaluate the maximum conduction losses use the following equation:

P = 1.1 x IF(AV) + 0.25 IF2(RMS)

DYNAMIC ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Test Conditions

trr

Reverse recovery Tj = 25°C IF = 0.5A IR = 1A

time

Irr = 0.25A

IF = 1A dIF/dt = - 15A/µs

VR = 30V

tfr

Forward recovery Tj = 25°C IF = 1A dIF/dt = 50A/µs

time

VFR = 1.1 x VFmax

VFP Forward recovery Tj = 25°C IF = 1A dIF/dt = 50A/µs

voltage

Min. Typ. Max. Unit

16 25 ns

55

60

ns

9.5

V

2/5

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