BUW12AF 데이터 시트보기 (PDF) - Philips Electronics

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BUW12AF

Silicon diffused power transistors

Philips Electronics 

Philips Semiconductors

Silicon diffused power transistors

Product specification

BUW12F; BUW12AF

2.0

handbook, full pagewidth

VBEsat

VCEsat

(V)

1.5

MGB914

1.0

(1)

(2)

0.5

(3)

0

10−1

(4)

1

10

IC/IB = 5.

(1) VBE; Tj = 25 °C.

(2) VBE; Tj = 100 °C.

(3) VCE; Tj = 100 °C.

(4) VCE; Tj = 25 °C.

IC (A)

102

Fig.6 Base-emitter and collector-emitter saturation voltages as functions of collector current; typical values.

1.6

handbook, full pagewidth

VBE

(V)

1.4

(1)

1.2

(2)

(3)

1.0

MGB911

0.8

0

0.5

1

1.5

2

2.5

IB (A)

3

Tj = 25 °C.

(1) IC = 8 A.

(2) IC = 6 A.

(3) IC = 3 A.

Fig.7 Base-emitter voltage as a function of base current; typical values.

1997 Aug 14

7

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